Phase-controlled molybdenum dioxide electrodes by RF reactive magnetron sputtering for achieving high-k rutile TiO2 dielectric-Reference-Cited by-同舟云学术

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Phase-controlled molybdenum dioxide electrodes by RF reactive magnetron sputtering for achieving high-k rutile TiO2 dielectric

Published:2024-02 Issue: Volume:220 Page:112776
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Lee Jae Hyeon^ORCID,Kang Wangu^ORCID,Chung Hong Keun,Kim Seong Keun,Han Jeong Hwan^ORCID

Funder

National Research Foundation of Korea

Korea Semiconductor Research Consortium

Ministry of Education

Ministry of Trade, Industry and Energy

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference31 articles.

1. New materials in memory development sub 50 nm: trends in flash and DRAM;Kuesters;Adv. Eng. Mater.,2009

2. 1T-1C dynamic random access memory status, challenges, and prospects;Spessot;IEEE Trans. Electron. Dev.,2020

3. Process-property relationship in high-K ALD SrTiO3 and BaTiO3: a review;Shim;J. Mater. Chem. C,2017

4. TiO2-Based metal-insulator-metal structures for future DRAM storage capacitors;Fröhlich;ECS Trans.,2013

5. Dielectric properties and characterisation of titanium dioxide obtained by different chemistry methods;Wypych;J. Nanomater.,2014

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-situ crystallization of rutile-phased TiO2 via the template effect using MoO2 electrode for the metal-insulator-metal capacitor applications;Journal of Alloys and Compounds;2024-10

2. Growth of Atomic layer-deposited Monoclinic Molybdenum Dioxide Films Stabilized by Tin Oxide Doping for DRAM Capacitor Electrode Applications;ACS Applied Materials & Interfaces;2024-04-25

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