Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor-Reference-Cited by-同舟云学术

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Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor

Published:2017-02-02 Issue:3 Volume:29 Page:1107-1115
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Austin Dustin Z.¹^ORCID,Jenkins Melanie A.¹,Allman Derryl²,Hose Sallie²,Price David²,Dezelah Charles L.³,Conley John F.¹

Affiliation:

1. School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97330, United States

2. Technology Development, ON Semiconductor, Gresham, Oregon 97030, United States

3. EMD Performance Materials, Haverhill, Massachusetts 01832, United States

Funder

Oregon Nanoscience and Microtechnologies Institute

ON Semiconductor

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.6b04251

Reference48 articles.

1. Liner materials for direct electrodeposition of Cu

2. Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode

3. Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer

4. TiO2-Based Metal-Insulator-Metal Structures for Future DRAM Storage Capacitors

5. The oxidation and resistance of tantalum-nitride thin films

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1. Area-Selective Atomic Layer Deposition of Ruthenium via Reduction of Interfacial Oxidation;Chemistry of Materials;2024-09-13

2. Ultrathin Metal Films with Low Resistivity via Atomic Layer Deposition: Process Pressure Effect on Initial Growth Behavior of Ru Films;Chemistry of Materials;2024-08-21

3. Enhanced nucleation mechanism in ruthenium atomic layer deposition: Exploring surface termination and precursor ligand effects with RuCpEt(CO)2;Journal of Vacuum Science & Technology A;2024-08-16

4. Area-Selective Atomic Layer Deposition of Ru Using Carbonyl-Based Precursor and Oxygen Co-Reactant: Understanding Defect Formation Mechanisms;Nanomaterials;2024-07-16

5. Volatile and thermally stable tungsten organometallic complexes (RCp)W(CO)2(η3-2-tert-butylallyl) as potential thin film deposition precursor;Inorganica Chimica Acta;2024-07

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