Germanium - the superior dopant in n-type GaN-Reference-Cited by-同舟云学术

Germanium - the superior dopant in n-type GaN

Published:2015-10-27 Issue:12 Volume:9 Page:716-721
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Nenstiel C.¹,Bügler M.¹,Callsen G.¹,Nippert F.¹,Kure T.¹,Fritze S.²,Dadgar A.²,Witte H.²,Bläsing J.²,Krost A.²,Hoffmann A.¹

Affiliation:

1. Institut für Festkörperphysik; Technische Universität Berlin; Hardenbergstr. 36 10623 Berlin Germany

2. Institut für Experimentelle Physik, Fakultät für Naturwissenschaften, Otto-von-Guericke-Universität Magdeburg; Universitätsplatz 2 39016 Magdeburg Germany

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference28 articles.

1. InGaN laser diodes with reduced AlGaN cladding thickness fabricated on GaN plasmonic substrate

2. Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

3. Substrates for gallium nitride epitaxy

4. Native defects in gallium nitride

5. Strain relaxation in AlGaN multilayer structures by inclined dislocations

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