Forming-free resistive switching characteristics and improved reliability in sub-stoichiometric NbN x films
Author:
Affiliation:
1. School of Electrical Engineering, Korea University; Anam-dong 5-ga Seongbuk-gu, Seoul 136-701 Korea
2. Department of Electrical Engineering, Sejong University; Neungdong-ro 209 Gwangjin-gu, Seoul 143-747 Korea
Funder
National Research Foundation of Korea (NRF) grant funded by the Korean Government
Samsung Semiconductor Research Center at Korea University
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201510022/fullpdf
Reference11 articles.
1. Nanoionics-based resistive switching memories
2. Leakage Current-Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices
3. Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device
4. Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications
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