Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO3 multilayer films constructed resistive switching memory devices-Reference-Cited by-同舟云学术

Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO3 multilayer films constructed resistive switching memory devices

Published:2018-04 Issue:02 Volume:11 Page:1850038
ISSN:1793-6047
Container-title:Functional Materials Letters
language:en
Short-container-title:Funct. Mater. Lett.

Author:

Mao Shuangsuo¹²,Zhang Xuejiao³,Sun Bai¹²,Li Bing⁴,Zhu Shouhui¹²,Zheng Pingping¹²,Zheng Liang¹²,Xia Yudong¹²

Affiliation:

1. School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, P. R. China

2. Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China and Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, P. R. China

3. School of Information Science and Engineering, Hebei North University, Zhangjiakou 075000, P. R. China

4. School of Electrical Engineering Southwest Jiaotong University, Chengdu, Sichuan 610031, P. R. China

Abstract

In this work, Ti and SrCoO3 (SCO) have been used for preparing the resistance random access memory (RRAM) with Ti/(SCO/Ag)[Formula: see text]/SCO/Ti ([Formula: see text], 1, 2, 3) structures. It is found that the as-prepared device with Ti/SCO/Ti ([Formula: see text]) structure represents the nonobvious resistive switching effect. However, it displays a more obvious resistive switching effect in the Ti/SCO/Ag/SCO/Ti ([Formula: see text]) device. In particular, a multi-stage switching phenomenon is observed when ultra-thin Ag films was embedded into SrCoO3 multilayer films. Finally, the multi-stage switching effect is explained by the model of conductive filaments formed step-by-step.

Funder

the Fundamental Research Funds for the Central Universities under Grant

the Youth Fund of Science and Technology of Hebei Colleges, China

Publisher

World Scientific Pub Co Pte Lt

Subject

General Materials Science

Link

https://www.worldscientific.com/doi/pdf/10.1142/S1793604718500388

Reference23 articles.

1. Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes

2. Synthesis of Alternating Copolysiloxane with Terthiophene and Perylenediimide Derivative Pendants for Involatile WORM Memory Device