Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices
Author:
Affiliation:
1. Department of Physics
2. Budapest University of Technology and Economics
3. 1111 Budapest, Hungary
4. MTA-BME Condensed Matter Research Group
Abstract
The non-exponential dynamics of resistive switchings in Ag2S memristive nanojunctions provides an ideal basis for non-volatile memory applications.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR00399G
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