Picosecond Femtojoule Resistive Switching in Nanoscale VO<sub>2</sub> Memristors-Reference-Cited by-同舟云学术

Picosecond Femtojoule Resistive Switching in Nanoscale VO₂ Memristors

Published:2024-08-08 Issue:33 Volume:18 Page:21966-21974
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Schmid Sebastian Werner¹²^ORCID,Pósa László¹³^ORCID,Török Tímea Nóra¹³^ORCID,Sánta Botond¹⁴,Pollner Zsigmond¹^ORCID,Molnár György³^ORCID,Horst Yannik⁵,Volk János³,Leuthold Juerg⁵^ORCID,Halbritter András¹⁴^ORCID,Csontos Miklós⁵^ORCID

Affiliation:

1. Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rkp. 3, H-1111 Budapest, Hungary

2. Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg 86159, Germany

3. Institute of Technical Physics and Materials Science, HUN-REN Centre for Energy Research, Konkoly-Thege M. út 29-33, 1121 Budapest, Hungary

4. HUN-REN-BME Condensed Matter Research Group, Műegyetem rkp. 3, H-1111 Budapest, Hungary

5. Institute of Electromagnetic Fields, ETH Zurich, Gloriastrasse 35, 8092 Zürich, Switzerland

Funder

Werner Siemens-Stiftung

Magyar Tudományos Akadémia

Nemzeti Kutatási Fejlesztési és Innovációs Hivatal

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.4c03840

Reference40 articles.

1. Dynamical memristors for higher-complexity neuromorphic computing

2. The future of electronics based on memristive systems

3. Memristive Field‐Programmable Analog Arrays for Analog Computing

4. Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices

5. Recent progresses on physics and applications of vanadium dioxide