Differences between chloro-carbon and hydro-carbon precursors in low-temperature epitaxial growth of 4H-SiC
Author:
Funder
National Science Foundation
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201004110/fullpdf
Reference16 articles.
1. Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
2. Growth mechanism of 6H‐SiC in step‐controlled epitaxy
3. Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive
4. 4H-SiC epitaxial layer growth by trichlorosilane (TCS)
5. Epitaxial growth and characterization of silicon carbide films
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC;Materials Science Forum;2013-01
2. Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method;Materials Science Forum;2012-05
3. Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications;Chemical Reviews;2011-12-02
4. Chlorinated precursor study in low temperature chemical vapor deposition of 4H-SiC;Thin Solid Films;2011-03
5. High Growth Rate of 4H-SiC Epilayers on On-Axis Substrates with Different Chlorinated Precursors;Crystal Growth & Design;2010-11-12
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