High Growth Rate of 4H-SiC Epilayers on On-Axis Substrates with Different Chlorinated Precursors
Author:
Affiliation:
1. Department of Physics, Chemistry and Biology, Linköping University SE-58 183 Linköping, Sweden
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg101288u
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4. Investigation of growth processes of ingots of silicon carbide single crystals
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