Study of spiral growth on 4H-silicon carbide on-axis substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Step-Controlled Epitaxial Growth of High-Quality SiC Layers
2. Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H‐SiC{0001} vicinal surfaces
3. Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle
4. Dislocation evolution in 4H-SiC epitaxial layers
5. Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes
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1. Kinetic Monte Carlo simulation study of the early stages of epitaxial SiC (0001) growth;Journal of Crystal Growth;2023-09
2. Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth;Materials;2023-01-12
3. Estimation of supersaturation at steps during chemical vapor deposition of 4H-SiC ( 0001¯ ) from reported growth rate and cross-sectional profile of spiral hillock;Japanese Journal of Applied Physics;2022-10-31
4. Characterization of Defect Structure in Epilayer Grown on On-Axis SiC by Synchrotron X-ray Topography;Journal of Electronic Materials;2022-01-16
5. Investigation of Factors Influencing the Occurrence of 3C-Inclusions for the Thick Growth of on-Axis C-Face 4H-SiC Epitaxial Layers;Materials;2020-10-28
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