1. Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues
2. T.Kim H.Choi M.Kim J.Yi D.Kim S.Cho H.Lee C.Hwang E.-R.Hwang J.Song S.Chae Y.Chun J.-K.Kim in2018 IEEE Int. Electron Devices Meet. IEEE 2018 pp.37.1.1–37.1.4.
3. G.Navarro A.Verdy N.Castellani G.Bourgeois V.Sousa G.Molas M.Bernard C.Sabbione P.Noe J.Garrione L.Fellouh L.Perniola in2017 Symp. VLSI Technol. IEEE 2017 pp.T94–T95.
4. M.Alayan E.Vianello G.Navarro C.Carabasse S. L.Barbera A.Verdy N.Castellani A.Levisse G.Molas L.Grenouillet T.Magis F.Aussenac M.Bernard B.DeSalvo J. M.Portal E.Nowak in2017 IEEE Int. Electron Devices Meet. IEEE 2017 pp.2.3.1–2.3.4.
5. D.Alfaro Robayo G.Sassine L.Grenouillet C.Carabasse T.Martin N.Castellani A.Verdy G.Navarro L.Ciampolini B.Giraud T.Magis V.Beugin E.Vianello G.Ghibaudo G.Molas E.Nowak in2019 IEEE Int. Mem. Workshop IEEE pp.132–135.