Photoluminescence Mechanism in Heavily Si‐Doped GaAsN
Author:
Affiliation:
1. Department of Electrical Engineering and Bioscience Waseda University Shinjuku‐ku Tokyo 169‐8555 Japan
2. NIT Ichinoseki College Takanashi Hagisyo Ichinoseki Iwate 021‐8511 Japan
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/crat.202000143
Reference27 articles.
1. Overlapping effects of the optical transitions of GaNAs thin films grown by molecular beam epitaxy
2. Bandgap evolution of GaN1−x As x in the whole composition range
3. Near band-edge luminescence and evidence of the weakening of the N-conduction-band coupling for partially relaxed and high nitrogen composition GaAs1−xNx epilayers
4. The anomalous bandgap bowing in GaAsN
5. Near-Infrared Lasing at 1 μm from a Dilute-Nitride-Based Multishell Nanowire
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1. Recombination mechanism of heavily Be-doped GaAsN by time-resolved photoluminescence;Journal of Vacuum Science & Technology A;2023-07-12
2. Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy;Journal of Materials Science: Materials in Electronics;2023-03
3. Photoluminescence Mechanism in Heavily Si‐Doped GaAsN;Crystal Research and Technology;2021-11
4. Photoluminescence Mechanism in Heavily Si‐Doped GaAsN;Crystal Research and Technology;2021-02-08
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