Near band-edge luminescence and evidence of the weakening of the N-conduction-band coupling for partially relaxed and high nitrogen composition GaAs1−xNx epilayers-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Near band-edge luminescence and evidence of the weakening of the N-conduction-band coupling for partially relaxed and high nitrogen composition GaAs1−xNx epilayers

Published:2007-10 Issue:7 Volume:102 Page:073716
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Coaquira J. A. H.,Pinault M.-A.,Litvinchuk A. P.,Bhusal L.,Freundlich Alex

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2786675

Reference41 articles.

1. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

2. From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction

3. Band Anticrossing in GaInNAs Alloys

4. Band Anticrossing in III-N-V Alloys

5. Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recombination mechanism of heavily Be-doped GaAsN by time-resolved photoluminescence;Journal of Vacuum Science & Technology A;2023-07-12

2. Electrical properties of heavily Si-doped GaAsN after annealing;Physica B: Condensed Matter;2022-01

3. Photoluminescence Mechanism in Heavily Si‐Doped GaAsN;Crystal Research and Technology;2021-02-08

4. Surface photovoltage and modulation spectroscopy of E− and E+ transitions in GaNAs layers;Thin Solid Films;2014-09

5. Band anticrossing in ZnOSe highly mismatched alloy;Applied Physics Express;2014-07-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP