Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers-Reference-Cited by-同舟云学术

Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers

Published:2022-09-15 Issue:11 Volume:32 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Mic Comp-Aid Eng

Author:

Janakiraman Varadhan¹,Mohanbabu Anandan²^ORCID,Maheswari Shanmugam³^ORCID,Daniel Raj Androse⁴,Deb Sanjoy⁴,VinodhKumar Nallathambi⁵

Affiliation:

1. Department of Electronics and Communication Engineering Dhanalakshmi Srinivasan College of Engineering and Technology Chennai India

2. Department of Electronics and Communication Engineering SRM Institute of Science and Technology, Ramapuram Chennai India

3. Department of Electronics and Communication Engineering Panimalar Engineering College Chennai India

4. Department of Electronics and Communication Engineering Bannari Amman Institute of Technology Sathyamangalam India

5. Department of Electronics and Communication Engineering Vel Tech Rangarajan Dr. Sangunthala R & D Institute of Science and Technology Chennai India

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mmce.23401

Reference45 articles.

1. Low Frequency Noise and Gate Bias Instability in Normally OFF AlGaN/GaN HEMTs

2. Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications

3. Sadeghi S Vadizadeh M Faez R Compare noise characteristic of DC‐HEMT and HEMT. Paper presented at: 21st Iranian Conference on Electrical Engineering (ICEE) Mashhad Iran May 14–162013.

4. A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor

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