P-21: Effects of Low Hydrogen Dielectric Film on a-IGZO TFT Properties
Author:
Affiliation:
1. BOE Technology Group Corporation, No. 9 Dize Road, Beijing 100176, China
Publisher
Wiley
Reference8 articles.
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3 Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors;ACS Applied Materials & Interfaces;2021-04-05
2. P-2: Self-Aligned Indium Gallium Zinc Oxide Thin-Film Transistor with Source/Drain Regions Treated by NH3Plasma;SID Symposium Digest of Technical Papers;2017-05
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