38‐2: Latest Breakthroughs in 200 and 300 mm EPI Technology to Unlock the Micro LED Revolution for the Metaverse and Beyond-Reference-Cited by-同舟云学术

38‐2: Latest Breakthroughs in 200 and 300 mm EPI Technology to Unlock the Micro LED Revolution for the Metaverse and Beyond

Published:2022-06 Issue:1 Volume:53 Page:474-477
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Nishikawa A.¹,Loesing A.¹,Slischka B.¹

Affiliation:

1. ALLOS Semiconductors GmbH Dresden Germany

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.15525

Reference5 articles.

1. Nishikawa A. Loesing A.andSlischka B.(2019) 55.1: Invited Paper: Achieving high uniformity of 200 mm GaN-on-Si LED epiwafers for micro LED applications.SID Symposium Digest of Technical Papers 50:591–594.https://doi.org/10.1002/sdtp.13581

2. Nishikawa A. Loesing A.andSlischka B.(2019) 25-1: Invited Paper: Achieving high uniformity and yield of 200 mm GaN-on-Si LED epiwafers for micro LED applications with precise strain-engineering.SID Symposium Digest of Technical Papers 50:338–341.https://doi.org/10.1002/sdtp.12925

3. Nishikawa A. Loesing A.andSlischka B.(2021) 46.3: Invited Paper: Technologies for scaling wafer diameter up to 300 mm to enable high yield and low cost micro LED production.SID Symposium Digest of Technical Papers 52:564–567.https://doi.org/10.1002/sdtp.15200

4. ALLOS Semiconductors press release 2020 https://www.alios-semiconductors.com/news/first-300-mm-wafer/

5. Arif R.A. Lee S. Hanser D. McKee M. Armour E. Kim B. Paranjpe A. Mitrovic B.andToh T.(2021) Proc. SPIE 11706 Light-Emitting Devices Materials and Applications XXV 1170613

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1. 53‐4: The path of 300 mm GaN‐on‐Si epiwafers into silicon semiconductor fabs;SID Symposium Digest of Technical Papers;2023-06