25‐1: Invited Paper: Achieving high uniformity and yield of 200 mm GaN‐on‐Si LED epiwafers for micro LED applications with precise strain‐engineering-Reference-Cited by-同舟云学术

25‐1: Invited Paper: Achieving high uniformity and yield of 200 mm GaN‐on‐Si LED epiwafers for micro LED applications with precise strain‐engineering

Published:2019-05-29 Issue:1 Volume:50 Page:338-341
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Nishikawa A.¹,Loesing A.¹,Slischka B.¹

Affiliation:

1. ALLOS Semiconductors GmbH Dresden Germany

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.12925

Reference8 articles.

1. E. H.Virey N.Baron “Status and prospects of microLED displays”SID 2018 DIGEST 593–596(2018).

2. ALLOS Semiconductors GmbH “Veeco and ALLOS Demonstrate Industry‐leading 200 mm GaN‐on‐Si Performance to enable Micro‐LED Adoption” http://www.allos‐semiconductors.com/news/en/veeco‐allos‐2017‐en/(2017).

3. ALLOS Semiconductors GmbH “Veeco and ALLOS technical collaboration accelerates the pace for 200 mm GaN‐on‐silicon micro LED applications for leading global customers” http://www.allos‐semiconductors.com/news/en/veeco‐and‐allos‐accelerate‐microled/(2018).

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