46.3: Invited Paper: Technologies for scaling wafer diameter up to 300 mm to enable high yield and low cost micro LED production
Author:
Affiliation:
1. ALLOS Semiconductors GmbH Dresden Germany
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.15200
Reference6 articles.
1. Growth of blue GaN LED structures on 150-mm Si(111)
2. 55.1: Invited Paper: Achieving high uniformity of 200 mm GaN‐on‐Si LED epiwafers for micro LED applications
3. 25‐1: Invited Paper: Achieving high uniformity and yield of 200 mm GaN‐on‐Si LED epiwafers for micro LED applications with precise strain‐engineering
4. ALLOS Semiconductors press release 2020 https://www.allos-semiconductors.com/news/first-300-mm-wafer/
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 53‐4: The path of 300 mm GaN‐on‐Si epiwafers into silicon semiconductor fabs;SID Symposium Digest of Technical Papers;2023-06
2. Monolithically integrated high-resolution full-color GaN-on-Si micro-LED microdisplay;Photonics Research;2022-12-23
3. 38‐2: Latest Breakthroughs in 200 and 300 mm EPI Technology to Unlock the Micro LED Revolution for the Metaverse and Beyond;SID Symposium Digest of Technical Papers;2022-06
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