55.1: Invited Paper: Achieving high uniformity of 200 mm GaN‐on‐Si LED epiwafers for micro LED applications-Reference-Cited by-同舟云学术

55.1: Invited Paper: Achieving high uniformity of 200 mm GaN‐on‐Si LED epiwafers for micro LED applications

Published:2019-09 Issue:S1 Volume:50 Page:591-594
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Nishikawa A.¹,Loesing A.¹,Slischka B.¹

Affiliation:

1. ALLOS Semiconductors GmbH Dresden Germany

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.13581

Reference8 articles.

1. E. H.Virey N.Baron “Status and prospects of microLED displays”SID 2018 DIGEST 593‐596(2018).

2. ALLOS Semiconductors GmbH “Veeco and ALLOS Demonstrate Industry-leading 200 mm GaN-on-Si Performance to enable Micro-LED Adoption” http://www.allos-semiconductors.com/news/en/veeco-allos-2017-en/(2017).

3. ALLOS Semiconductors GmbH “Veeco and ALLOS technical collaboration accelerates the pace for 200 mm GaN-on-silicon micro LED applications for leading global customers” http://www.allos-semiconductors.com/news/en/veeco-and-allos-accelerate-microled/(2018).

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Challenges of high-yield manufacture in micro-light-emitting diodes displays: chip fabrication, mass transfer, and detection;Journal of Physics D: Applied Physics;2024-08-28

2. Research Progress of Micro-LED Display Technology;Crystals;2023-06-23

3. 53‐4: The path of 300 mm GaN‐on‐Si epiwafers into silicon semiconductor fabs;SID Symposium Digest of Technical Papers;2023-06

4. 38‐2: Latest Breakthroughs in 200 and 300 mm EPI Technology to Unlock the Micro LED Revolution for the Metaverse and Beyond;SID Symposium Digest of Technical Papers;2022-06

5. Live Calibration Yields Lively Colors;Information Display;2021-09