A data‐independent 9T SRAM cell with enhanced I ON /I OFF ratio and RBL voltage swing in near threshold and sub‐threshold region-Reference-Cited by-同舟云学术

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A data‐independent 9T SRAM cell with enhanced I ON /I OFF ratio and RBL voltage swing in near threshold and sub‐threshold region

Published:2021-02-03 Issue:4 Volume:49 Page:953-969
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Int J Circ Theor Appl

Author:

Gupta Monica¹²,Gupta Kirti²,Pandey Neeta¹^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering Delhi Technological University New Delhi 110042 India

2. Department of Electronics and Communication Engineering Bharati Vidyapeeth's College of Engineering New Delhi 110063 India

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/cta.2951

Reference17 articles.

1. Design and statistical analysis of low power and high speed 10T static random access memory cell

2. A super cut-off CMOS (SCCMOS) scheme for 0.5-V supply voltage with picoampere stand-by current

3. A write-improved low-power 12T SRAM cell for wearable wireless sensor nodes

4. KhellahMM KeshavarziA SomasekharD KarnikT DeV.Read and write circuit assist techniques for improving vccmin of dense 6T SRAM cell. In:Proceedings ‐ 2008 IEEE International Conference on Integrated Circuit Design and Technology ICICDT.2008.https://doi.org/10.1109/ICICDT.2008.4567275

5. An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches

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1. Design of dual port 9T SRAM cell with parallel processing and high performance computing;Physica Scripta;2024-08-20

2. Design of Low Power and Energy Efficient Write Driver with Bitline Leakage Compensation for SRAM;Communications in Computer and Information Science;2024

3. Evaluating Sense Amplifier Performance in SRAM Circuits;2023 3rd International Conference on Technological Advancements in Computational Sciences (ICTACS);2023-11-01

4. Design of highly stable, high speed and low power 10T SRAM cell in 18-nm FinFET technology;Engineering Research Express;2023-09-01

5. Bit-line leakage current tracking and self-compensation circuit for SRAM reliability design;Microelectronics Journal;2023-02

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