Bit-line leakage current tracking and self-compensation circuit for SRAM reliability design

Author:

Dai Chenghu,Du Yuanyuan,Shi Qi,Wang Ruixuan,Zheng Hao,Lu Wenjuan,Peng Chunyu,Hao Licai,Lin Zhiting,Wu Xiulong

Publisher

Elsevier BV

Subject

General Engineering

Reference21 articles.

1. A 9T high-stable and low-energy half-select-free SRAM cell design using TMDFETs;Abbasian;Analog Integr. Circuits Signal Process.,2022

2. Low-power and high speed SRAM for ultra low power applications;Meshram,2022

3. Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM;Abbasian;Microelectron. J.,2022

4. Low power wide area networks: an overview;Raza;IEEE Commun. Surv. Tutor.,2017

5. Low-power cache design using 7T SRAM cell;Aly;IEEE Trans. Circ. Syst. II: Express Briefs,2007

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