Design of Low Power and Energy Efficient Write Driver with Bitline Leakage Compensation for SRAM
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Publisher
Springer Nature Switzerland
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-54162-9_4
Reference13 articles.
1. Abbasian, E., Sofimowloodi, S.: Energy-efficient single-ended Read/Write 10T near-threshold SRAM. IEEE Trans. Circuits Syst. I Regul. Pap. 70(5), 2037–2047 (2023). https://doi.org/10.1109/TCSI.2023.3247807
2. Gupta, M., et al.: A data-independent 9T SRAM cell with enhanced ION/IOFF ratio and RBL voltage swing in near threshold and sub-threshold region. Int. J. Circuit Theory Appl. 49, 953–969 (2021). https://doi.org/10.1002/cta.2951
3. Yan, A., et al.: Novel speed-and-power-optimized SRAM cell designs with enhanced self-recoverability from single- and double-node upsets. IEEE Trans. Circuits Syst. I Regul. Pap. 67(12), 4684–4695 (2020). https://doi.org/10.1109/TCSI.2020.3018328
4. Rajaei, R., et al.: Single event multiple upset-tolerant SRAM cell designs for nano-scale CMOS technology. Turkish J. Elect. Eng. Comput. Sci. 25(1), 1035–1047 (2017). https://doi.org/10.3906/elk-1502-124
5. Gupta, M., et al.: A novel PVT-variation-tolerant Schmitt-trigger-based 12T SRAM cell with improved write ability and high ION/IOFF ratio in sub-threshold region. Int. J. Circuit Theory Appl. 49(11), 3789–3810 (2021). https://doi.org/10.1002/cta.3134
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