A novel PVT‐variation ‐ tolerant Schmitt‐trigger‐based 12T SRAM cell with improved write ability and high I ON /I OFF ratio in sub‐threshold region-Reference-Cited by-同舟云学术

A novel PVT‐variation ‐ tolerant Schmitt‐trigger‐based 12T SRAM cell with improved write ability and high I ON /I OFF ratio in sub‐threshold region

Author:

Gupta Monica¹²,Gupta Kirti²,Pandey Neeta¹^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering Delhi Technological University New Delhi India

2. Department of Electronics and Communication Engineering Bharati Vidyapeeth's College of Engineering New Delhi India

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Link

Reference28 articles.

4. Process variation tolerant SRAM array for ultra low voltage applications;Kulkarni JP;Proc ‐ Des Autom Conf,2008

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