Fundamentals and practice of metal contacts to wide band gap semiconductor devices-Reference-Cited by-同舟云学术

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Fundamentals and practice of metal contacts to wide band gap semiconductor devices

Published:2011-12-15 Issue:3 Volume:47 Page:261-272
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Borysiewicz M. A.,Kamińska E.,Myśliwiec M.,Wzorek M.,Kuchuk A.,Barcz A.,Dynowska E.,di Forte-Poisson M.-A.,Giesen C.,Piotrowska A.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference26 articles.

1. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

2. Electroless Nickel Plating for Making Ohmic Contacts to Silicon

3. Nickel based ohmic contacts on SiC

4. On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC

5. Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide

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