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High work function MoO 2 and ReO 2 contacts for p -type Si and GaN by a room-temperature non-vacuum process

  • Published:2017-11 Issue: Volume:71 Page:374-377
  • ISSN:1369-8001
  • Container-title:Materials Science in Semiconductor Processing
  • language:en
  • Short-container-title:Materials Science in Semiconductor Processing

Author:

Lee Won-Jae,Parmar Narendra S.,Choi Ji-Won

Funder

Ministry of Trade, Industry & Energy

KIST

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. The effect of molybdenum oxide interlayer on organic photovoltaic cells;Kim;Appl. Phys. Lett.,2009

2. Ohmic contacts for compound semiconductors;Murakami;Crit. Rev. Solid State Mater. Sci.,1998

3. Ohmic-contact technology for GaN-based light-emitting diodes: role of p-type contact;Song;IEEE Trans. Electron Devices,2010

4. Schottky barriers on p-type silicon;Smith;Solid-State Electron.,1971

5. The work function of the elements and its periodicity;Michaelson;J. Appl. Phys.,1977

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