Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy
Author:
Affiliation:
1. Institute of Experimental Physics; TU Bergakademie Freiberg; Leipziger Str. 23 09599 Freiberg Germany
2. Department of Electrical Engineering; Technion, Israel Institute of Technology; Haifa 32000 Israel
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.201400468/fullpdf
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