The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2008361
Reference14 articles.
1. Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN
2. Long-term thermal stability of Ti/Al/Pt/Au Ohmic contacts to n-type GaN
3. Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n‐GaN
4. Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN
5. Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n–GaN
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2. Electrical and X-Ray Photoelectron Spectroscopy Studies of Ti/Al/Ti/Au Ohmic Contacts to AlGaN/GaN;IEICE Transactions on Electronics;2024-09-01
3. Low contact resistivity at the 10−4 Ω cm2 level fabricated directly on n-type AlN;Applied Physics Letters;2024-08-19
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