Determination of lateral block size and mosaicity of crystals using X‐ray diffraction from the edge of the sample-Reference-Cited by-同舟云学术

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Determination of lateral block size and mosaicity of crystals using X‐ray diffraction from the edge of the sample

Published:2016-03-22 Issue:4 Volume:51 Page:276-281
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Serafińczuk Jarosław¹

Affiliation:

1. Faculty of Microsystem Electronics and Photonics Wroclaw University of Technology Janiszewskiego 11/17 50–372 Wroclaw Poland

Funder

National Center for Science and Engineering Statistics

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/crat.201500309

Reference21 articles.

1. Dislocation generation in GaN heteroepitaxy

2. Analysis of the nucleation of GaN layers on (0001) sapphire

3. Comparative analysis of characteristics of Si, Mg, and undoped GaN

4. Influence of crystallographic structure on electrical characteristics of (Al,Ga)N epitaxial layers grown by MOVPE method

5. Distribution of the lateral correlation length in GaN epitaxial layers

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-resolution X-ray diffraction to probe quantum dot asymmetry;Measurement;2023-11

2. X-ray diffraction studies of residual strain in AlN/sapphire templates;Measurement;2022-08

3. Adjusting the photoconductive properties of LaCoO3 thin films by epitaxial strain;Optical Materials;2021-11

4. Determination of dislocation density in GaN/sapphire layers using XRD measurements carried out from the edge of the sample;Journal of Alloys and Compounds;2020-06

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