Influence of crystallographic structure on electrical characteristics of (Al,Ga)N epitaxial layers grown by MOVPE method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Minority carrier diffusion length and lifetime in GaN
2. Structure Characterization of (Al,Ga)N Epitaxial Layers by Means of X-Ray Diffractometry
3. Impedance spectroscopy analysis of AlGaN/GaN HFET structures
4. Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation
5. Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determination of lateral block size and mosaicity of crystals using X‐ray diffraction from the edge of the sample;Crystal Research and Technology;2016-03-22
2. Grain boundary related electrical transport in Al-rich Al x Ga1 − x N layers grown by metal-organic chemical vapor deposition;Semiconductors;2011-01
3. Study of grain boundaries influence on electrical properties of nitrides;Vacuum;2008-06
4. Simulation of the influence of grain structure of heteroepitaxial nitrides layers on the performance of MSM detector;2007 International Students and Young Scientists Workshop on Photonics and Microsystems;2007-07
5. Optical investigations of two dimensional electron gas in the AlGaN/GaN heterostructures;physica status solidi (c);2004-01-19
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3