Study of grain boundaries influence on electrical properties of nitrides
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference15 articles.
1. Dislocation generation in GaN heteroepitaxy
2. Influence of crystallographic structure on electrical characteristics of (Al,Ga)N epitaxial layers grown by MOVPE method
3. Grain-boundary-controlled transport in GaN layers
4. Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN
5. Electron transport mechanism in gallium nitride
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