Three-dimensional study of the pressure field and advantages of hemispherical crucible in silicon Czochralski crystal growth
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference14 articles.
1. 3D computation of oxygen transport in Czochralski crystal growth of silicon considering evaporation
2. Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400mm diameter Si Cz crystal growth
3. Computational simulation of the melt flow during Czochralski growth
4. Effect of the buoyancy parameter on czochralski bulk flow in garnet growth
5. Numerical study of the effects of cusp-shaped magnetic fields and thermal conductivity on the melt-crystal interface in CZ crystal growth
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Three dimensional numerical study of the effect of large Grashof number on HEM crystal growth;Crystal Research and Technology;2016-03-17
2. Symmetry Breaking in Electromagnetic Spherical Cz Crystal Growth with Rotating Crystal and Crucible;Sensor Letters;2013-12-01
3. Global simulation of the Czochralski silicon crystal growth in ANSYS FLUENT;Journal of Crystal Growth;2013-05
4. Numerical investigation of magnetic field effect on pressure in cylindrical and hemispherical silicon CZ crystal growth;Crystal Research and Technology;2012-12
5. Effect of crucible geometry on melt convection and interface shape during Kyropoulos growth of sapphire single crystal;Journal of Crystal Growth;2011-06
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