Effect of crucible geometry on melt convection and interface shape during Kyropoulos growth of sapphire single crystal
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
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2. Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapour-phase epitaxy;Toru;J. Appl. Phys.,1987
3. Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates;Kuznia;J. Appl. Phys.,1993
4. Numerical analysis of sapphire crystal growth by the Kyropoulos technique;Demina;Opt. Mater.,2007
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