Numerical simulation of the sapphire growth process using a self-regulating thermal boundary condition method-Reference-Cited by-同舟云学术

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Numerical simulation of the sapphire growth process using a self-regulating thermal boundary condition method

Published:2018-03 Issue: Volume:132 Page:87-94
ISSN:1359-4311
Container-title:Applied Thermal Engineering
language:en
Short-container-title:Applied Thermal Engineering

Author:

He Yurong,Hua Zhiwei,Chen Meijie,Tang Tianqi,Han Jiecai

Funder

Foundation for Innovative Research Groups of the National Natural Science Foundation of China

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Elsevier BV

Subject

Industrial and Manufacturing Engineering,Energy Engineering and Power Technology

Reference22 articles.

1. Effect of crucible geometry on melt convection and interface shape during Kyropoulos growth of sapphire single crystal;Lee;J. Cryst. Growth,2011

2. Characterization of low angle grain boundary in large sapphire crystal grown by the Kyropoulos method;Yu;J. Cryst. Growth,2014

3. Preparation and properties of hard crystalline materials for optical applications—a review;Savage;J. Cryst. Growth,1991

4. World’ s largest sapphire for many applications;Khattak;J. Cryst. Growth,2015

5. Temperature field design, process analysis and control of SAPMAC method for the growth of large size sapphire crystals;Xu;Cryst. Res. Technol.,2007

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1. Modeling of the Control System of the Temperature Field in the Carbon-Graphite Thermal Node During the Growth of Leucosapphires;2024 Conference of Young Researchers in Electrical and Electronic Engineering (ElCon);2024-01-29

2. Three-dimensional characteristics of turbulent flow and heat transfer in Czochralski silicon melt with different cusp magnetic field configurations;Physics of Fluids;2022-02

3. Unsteady melt heat flow coupling optimization method for sapphire crystal seeding growth by the Kyropoulos method;CrystEngComm;2022

4. Effect of cusp magnetic field on the turbulent melt flow and crystal/melt interface during large-size Czochralski silicon crystal growth;International Journal of Thermal Sciences;2021-12

5. Stability Analysis of Thermocapillary Convection of B₂O₃/Sapphire Melt in an Annular Pool;Materials Science Forum;2021-06-29

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