Global simulation of the Czochralski silicon crystal growth in ANSYS FLUENT
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference31 articles.
1. Crystal Growth of Si for Solar Cells;Nakajima,2009
2. Prediction of the growth interface shape in industrial 300mm CZ Si crystal growth;Wetzel;Journal of Crystal Growth,2004
3. 3D computation of oxygen transport in Czochralski crystal growth of silicon considering evaporation;Raufeisen;Journal of Crystal Growth,2007
4. Numerical studies of flow patterns during Czochralski growth of square-shaped Si crystals;Miller;Journal of Crystal Growth,2011
5. Optimization of furnace design and growth parameters for Si CZ growth, using numerical simulation;Smirnova;Journal of Crystal Growth,2008
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