Iterative deconvolution using the MRI model for removing experimental broadening and shift effects in SIMS depth profiles-Reference-Cited by-同舟云学术

Iterative deconvolution using the MRI model for removing experimental broadening and shift effects in SIMS depth profiles

Published:2018-09-14 Issue:12-13 Volume:50 Page:1336-1342
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf Interface Anal

Author:

Boulsina Fayçal¹²^ORCID,Gautier Brice³

Affiliation:

1. Département d'électronique et télécommunications, Faculté des sciences et de la technologie; Université 8 Mai 1945 Guelma, BP 401; Guelma 24000 Algérie

2. Laboratoire Hyperfréquences et Semi-conducteurs; Université Constantine 1; BP 325, Route Ain El-Bey Constantine 25017 Algérie

3. Institut des Nanotechnologies de Lyon, INSA de Lyon; Université de Lyon; UMR CNRS 5270, 7, avenue Capelle F-69621 Villeurbanne France

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.6527/fullpdf

Reference22 articles.

1. Deconvolution of SIMS depth profiles of boron in silicon;Gautier;Surf Interface Anal,1996

2. Sputter depth profile analysis of interfaces;Hofmann;Rep Prog Phys,1998

3. An analytic form for the SIMS response function measured from ultra-thin impurity layers;Dowsett;Surf Interface Anal,1994

4. Deconvolution of SIMS depth profiles: towards simple and faster techniques;Boulsina;Appl Surf Sci,2008

5. Reliability of multiresolution deconvolution for improving depth resolution in SIMS analysis;Boulakroune;Appl Surf Sci,2016

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