SIMS backside depth profiling of ultrashallow implants using silicon-on-insulator substrates-Reference-Cited by-同舟云学术

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SIMS backside depth profiling of ultrashallow implants using silicon-on-insulator substrates

Published:2002 Issue:5 Volume:33 Page:373-375
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Yeo K. L.,Wee A. T. S.,Liu R.,Ng C. M.,See A.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference9 articles.

1. Secondary ion mass spectrometry and atomic force spectroscopy studies of surface roughening, erosion rate change and depth resolution in Si during 1 keV 60° O[sub 2][sup +] bombardment with oxygen flooding

2. Effects of oxygen flooding on crater bottom composition and roughness in ultrashallow secondary ion mass spectrometry depth profiling

3. SIMS with sample rotation: an experimental novelty or a practical necessity?

4. Ultra shallow secondary ion mass spectrometry depth profiling: Limitation of sample rotation in improving depth resolution

5. Interface broadening in sputter depth profiling through alternating layers of isotopically purified silicon

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1. Silver Diffusion in Organic Optoelectronic Devices: Deposition-Related Processes versus Secondary Ion Mass Spectrometry Analysis Artifacts;The Journal of Physical Chemistry C;2015-10-05

2. Accurate analysis of shallowly implanted solar wind ions by SIMS backside depth profiling;Chemical Geology;2014-12

3. Backside Analysis of Ultra-Thin Film Stacks in Microelectronics Technology Using X-ray Photoelectron Spectroscopy;MRS Proceedings;2009

4. Front and back side Auger electron spectroscopy depth profile analysis to verify an interfacial reaction at the HfN∕SiO[sub 2] interface;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

5. Characterization of nanolayers by sputter depth profiling;Applied Surface Science;2005-02

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