1. Detailed analysis of the silicon surface under low-energy oxygen bombardment at atomic resolution;Physical Review B;2012-08-21
2. Investigation of the factors determining the SIMS depth resolution in silicon-isotope multiple layers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-01
3. Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-01
4. Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-01
5. Molecular Depth Profiling with Cluster Secondary Ion Mass Spectrometry and Wedges;Analytical Chemistry;2009-12-07