Ultra shallow secondary ion mass spectrometry depth profiling: Limitation of sample rotation in improving depth resolution
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference20 articles.
1. Sources of error in quantitative depth profiling of shallow doping distributions by secondary-ion-mass spectrometry in combination with oxygen flooding
2. The complex formation of ripples during depth profiling of Si with low energy, grazing oxygen beams
3. Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment
4. Effect of surface roughening on secondary ion yields and erosion rates of silicon subject to oblique oxygen bombardment
5. Influence of the composition of the altered layer on the ripple formation
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