Investigation of metallic interdiffusion in Al x Ga1−x N/GaN/sapphire heterostructures used for microelectronic devices by SEM/EDX and SIMS depth profiling-Reference-Cited by-同舟云学术

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Investigation of metallic interdiffusion in Al x Ga1−x N/GaN/sapphire heterostructures used for microelectronic devices by SEM/EDX and SIMS depth profiling

Published:2010-02-20 Issue:7 Volume:397 Page:2865-2871
ISSN:1618-2642
Container-title:Analytical and Bioanalytical Chemistry
language:en
Short-container-title:Anal Bioanal Chem

Author:

Téllez H.,Vadillo J. M.,Laserna J. J.

Publisher

Springer Science and Business Media LLC

Subject

Biochemistry,Analytical Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00216-010-3482-5.pdf

Reference29 articles.

1. International SEMATECH (2008) International technology roadmap for semiconductors. http://www.sematech.org/

2. Adams F, Van Vaeck L, Barret R (2005) Spectrochim Acta B 60:13–26

3. Lloyd KG, O’Keefe DP (2004) Appl Surf Sci 231–232:207–216

4. Magee CW, Frost MR (1995) Int J Mass Spectrom Ion Proc 143:29–41

5. Tsukamoto K, Yoshikawa S, Toujou F, Morita H (2003) Appl Surf Sci 203–204:404–408

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3. Atomic spectrometry update. Industrial analysis: metals, chemicals and advanced materials;Journal of Analytical Atomic Spectrometry;2011

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