60-4: Mechanically Robust High-Performance Flexible Oxide TFTs with Imbedded Buried CNT Electrode for Bendable Displays-Reference-Cited by-同舟云学术

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60-4: Mechanically Robust High-Performance Flexible Oxide TFTs with Imbedded Buried CNT Electrode for Bendable Displays

Published:2018-05 Issue:1 Volume:49 Page:800-803
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Billah Mohammad Masum¹,Park Min Sang¹,Saha Jewel Kumer¹,Hasan Md Mehedi¹,Han Ji-Ung²,Hwang Mangyu²,Jang Jin¹

Affiliation:

1. Department of Information Display and Advanced Display Research Center; Kyung Hee University; Seoul South Korea

2. Silvaco Korea Co. Ltd; Seoul South Korea

Funder

Korea Evaluation Institute of Industrial Technology

Ministry of Trade, Industry and Energy

Publisher

Wiley

Reference9 articles.

1. Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si;Zhang;Appl. Phys. Lett.,2013

2. Single-Grain Si TFTs Fabricated From Sputtered Si on a Polyimide Substrate;Zhang;J. Display Technol.,2014

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,Nov 2004

4. Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics;Kim;Scientific Reports,2016

5. Oxide Semiconductor Thin Film Transistors on Thin Solution-Cast Flexible Substrates;Li;IEEE Electron Device Lett,2015

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1. Fatigue Effect of Stretchable a-InGaZnO TFT on PI/PDMS Substrate under Repetitive Uni/Biaxial Elongation Stress;ACS Applied Electronic Materials;2022-11-18

2. Tensile-Force-Resilient Biomedical Front-End Circuits Employing Auto-Calibrated Omni-Directional Thin-Film Transistors;IEEE Transactions on Nanotechnology;2022

3. Delamination of Graphene/ZnO interlayer driven by photocatalytic effect for flexible a-IGZO TFT applications;Applied Surface Science;2022-01

4. Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress;Advanced Engineering Materials;2020-10-27

5. Electrical characteristics of bendable a-ITGZO TFTs on colorless polyimide substrates;Semiconductor Science and Technology;2020-05-22

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