Electrical characteristics of bendable a-ITGZO TFTs on colorless polyimide substrates
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab8439/pdf
Reference23 articles.
1. Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics
2. 60-4: Mechanically Robust High-Performance Flexible Oxide TFTs with Imbedded Buried CNT Electrode for Bendable Displays
3. Highly Bendable, Transparent Thin-Film Transistors That Use Carbon-Nanotube-Based Conductors and Semiconductors with Elastomeric Dielectrics
4. Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors
5. Metal oxide semiconductor thin-film transistors for flexible electronics
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1. Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings;Heliyon;2024-07
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3. Synaptic Transistor Arrays Based on PVA/Lignin Composite Electrolyte Films;IEEE Transactions on Electron Devices;2023-06
4. Flexible Oxide Thin Film Transistors, Memristors, and Their Integration;Advanced Functional Materials;2023-03-26
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