Experimental shift allowance in the deconvolution of SIMS depth profiles-Reference-Cited by-同舟云学术

Experimental shift allowance in the deconvolution of SIMS depth profiles

Published:2013-03-25 Issue:8 Volume:45 Page:1228-1232
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Yunin Pavel Andreevich¹,Drozdov Yurii Nikolaevich¹,Drozdov Mikhail Nikolaevich¹

Affiliation:

1. Institute for Physics of Microstructures Russian Academy of Science; Department for technology of nanostructures and devices; Nizhny Novgorod; Russian Federation

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference24 articles.

1. Atomic mixing, surface roughness and information depth in high-resolution AES depth profiling of a GaAs/AlAs superlattice structure

2. Deconvolution of SIMS Depth Profiles of Boron in Silicon

3. Effectiveness and Limits of the Deconvolution of SIMS Depth Profiles of Boron in Silicon

4. Toward a better reliability in the deconvolution of SIMS depth profiles

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