Kinetik der pyrolytischen Abscheidung von Siliciumcarbid auf kugelförmigen Teilchen in einem Fließbettreaktor
Author:
Publisher
Wiley
Subject
Industrial and Manufacturing Engineering,General Chemical Engineering,General Chemistry
Reference13 articles.
1. P. Popper, J. Mohyuddin 37
2. E. Fitzer, M. Bonnke 43
3. C. Kawashima, N. Setaka, J. Nakagawa
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1. Kinetics of CVD of stoichiometric and Si-excess SiC in the system MTS/H2 at medium decomposition of MTS;Chemical Vapor Deposition;1996-07
2. Residence-time dependent kinetics of CVD growth of SiC in the system;Journal of Crystal Growth;1996-03
3. Kinetic study of silicon carbide deposited from methyltrichlorosilane precursor;Journal of Materials Research;1994-01
4. Kinetics of Chemical Vapor Deposition of Sic Between 750 and 850°C at 1 Bar Total Pressure;MRS Proceedings;1991
5. Preparation of silicon carbide powders by chemical vapour deposition of the (CH3)2SiCl2-H2 system;Journal of Materials Science;1990-11
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