Preparation of silicon carbide powders by chemical vapour deposition of the (CH3)2SiCl2-H2 system-Reference-Cited by-同舟云学术

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Preparation of silicon carbide powders by chemical vapour deposition of the (CH3)2SiCl2-H2 system

Published:1990-11 Issue:11 Volume:25 Page:4614-4621
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Chen Lidong,Goto Takashi,Hirai Toshio

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF01129915.pdf

Reference30 articles.

1. Y. Takeda et al., in ?Advances in Ceramics, Vol. 7?, edited by M. F. Yan and A. H. Heuer (American Ceramic Society, Columbus, Ohio, 1983) p. 253.

2. H. K. Bowen,Mater. Sci. Engng 44 (1980) 1.

3. A. Kato, J. Hojo andY. Okabe,Mem. Fac. Engng Kyushu Univ. 41 (1981) 319.

4. W. R. Cannon et al., J. Amer. Ceram. Soc. 65 (1982) 330.

5. Y. Okabe, J. Hojo andA. Kato,J. Chem. Soc. Jpn 2 (1980) 188.

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3. Characterization of β-Silicon Carbide Powders Synthesized by the Carbothermal Reduction of Silicon Carbide Precursors;Journal of the American Ceramic Society;1998-12

4. Reduced-Pressure Chemical Vapor Synthesis of Nanocrystalline Silicon Carbide Powders;Chemical Vapor Deposition;1998-07

5. A Kinetic Study of the Chemical Vapor Deposition of Silicon Carbide from Dichlorodimethylsilane Precursors;Journal of The Electrochemical Society;1998-04-01

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