A Kinetic Study of the Chemical Vapor Deposition of Silicon Carbide from Dichlorodimethylsilane Precursors-Reference-Cited by-同舟云学术

A Kinetic Study of the Chemical Vapor Deposition of Silicon Carbide from Dichlorodimethylsilane Precursors

Published:1998-04-01 Issue:4 Volume:145 Page:1277-1284
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Takeuchi T.¹²,Egashira Y.³,Osawa T.²,Komiyama H.²

Affiliation:

1. Research Fellow of the Japan Society for the Promotion of Science, Department of Chemical Science and Engineering, Graduate School of Engineering Science, Osaka University, 1‐3 Machikaneyama‐cho, Toyonaka‐shi, Osaka 560, Japan

2. Department of Chemical System Engineering, Faculty of Engineering, The University of Tokyo, 7‐3‐1 Hongo, Bunkyo‐ku, Tokyo 113, Japan

3. Division of Chemical Engineering, Department of Chemical Science and Engineering, Graduate School of Engineering Science, Osaka University, 1‐3 Machikaneyama‐cho, Toyonaka‐shi, Osaka 560, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1838451/pdf

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