Kinetic and gas-phase study of the chemical vapor deposition of silicon carbide from C2H3SiCl3/H2
Author:
Funder
Safran
Association Nationale de la Recherche et de la Technologie
Publisher
Elsevier BV
Subject
General Chemical Engineering
Reference51 articles.
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4. Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH3SiCl3H2
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