Kinetics of CVD of stoichiometric and Si-excess SiC in the system MTS/H2 at medium decomposition of MTS
Author:
Publisher
Wiley
Subject
Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry
Reference23 articles.
1. Growth of silicon carbide by chemical vapour deposition
2. On the formation of β-SiC from pyrolysis of CH3SiCl3 in hydrogen
3. Temperature and concentration dependence of SiC deposition on Nicalon fibers
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