Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors-Reference-Cited by-同舟云学术

Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors

Published:2022-01-07 Issue:5 Volume:8 Page:2101062
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Choi Sungju¹,Park Jingyu¹,Hwang Seong‐Hyun²,Kim Changwook³,Kim Yong‐Sung⁴,Oh Saeroonter⁵,Baeck Ju Heyuck⁶,Bae Jong Uk⁷,Noh Jiyong⁶,Lee Seok‐Woo⁶,Park Kwon‐Shik⁶,Kim Jeom‐Jae⁶,Yoon Soo Young⁶,Kwon Hyuck‐In²,Kim Dae Hwan¹³^ORCID

Affiliation:

1. School of Electrical Engineering Kookmin University Seoul 02707 Korea

2. School of Electrical and Electronics Engineering Chung‐Ang University Seoul 06974 Korea

3. Circadian ICT Research Center Kookmin University Seoul 02707 Korea

4. Korea Research Institute of Standards and Science Daejeon 34113 Korea

5. Department of Electrical and Electronic Engineering Hanyang University Ansan 15588 Korea

6. R&D Center LG Display Company Paju 10845 Korea

7. OLED TV Business Unit LG Display Company Paju 10845 Korea

Funder

National Research Foundation of Korea

Ministry of Education

Korea Institute of Energy Technology Evaluation and Planning