21-1: Development of 55” 4K UHD OLED TV Employing the Internal Gate IC with High Reliability and Short Channel IGZO TFTs-Reference-Cited by-同舟云学术

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21-1: Development of 55” 4K UHD OLED TV Employing the Internal Gate IC with High Reliability and Short Channel IGZO TFTs

Published:2017-05 Issue:1 Volume:48 Page:288-290
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Noh Ji Yong¹,Han Dong Min¹,Jeong Woo Cheol¹,Kim Jong Woo¹,Cha Soo Youle¹

Affiliation:

1. OLED TV Panel Group; LG display Co.; Paju Korea

Publisher

Wiley

Reference5 articles.

1. Oxide TFTs for AMOLED TFTs;Park;Information Display,2013

2. S. J. Yun Development of 65-in 4K OLED TV with High Reliability Improvement of InGaZnO Thin-Film Transistors 2016

3. J. S. Jeong Scalability Characteristics of Self-Aligned Top-Gate IGZO TFTs 2015

4. Nicolae et al. Silicon Oxide (SiOx, 0

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1. 39‐1: Invited Paper: An Improved Gate Driver Using Oxide TFTs for Large OLED Displays;SID Symposium Digest of Technical Papers;2024-06

2. Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT);Scientific Reports;2024-05-02

3. Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO₂ Interfacial Layer on PECVD SiO₂ Gate Insulator;IEEE Transactions on Electron Devices;2024-03

4. Gate bias stress reliability of a-InGaZnO TFTs under various channel dimension;Microelectronics Reliability;2024-02

5. Highly Stable, Self-Aligned Coplanar a-InGaZnO TFTs With Oxide and Hydrogenated Amorphous Si Contacts;IEEE Electron Device Letters;2023-12

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