All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride-Reference-Cited by-同舟云学术

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All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride

Published:2021-03-18 Issue:4 Volume:7 Page:2000883
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Reinhardt Anna¹^ORCID,Wenckstern Holger¹,Grundmann Marius¹

Affiliation:

1. Felix Bloch Institute for Solid State Physics Universität Leipzig Linnéstr. 5 Leipzig 04103 Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000883

Reference26 articles.

1. Internet of Things in Industries: A Survey

2. High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

3. Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors

4. Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application

5. Ar plasma treated ZnON transistor for future thin film electronics

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1. Thinning Solution‐proceed 2D Te for p‐ and n‐channel Junction Field Effect Transistor with High Mobility and Ideal Subthreshold Slope;Advanced Functional Materials;2024-04-22

2. In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses;ACS APPL ELECTRON MA;2022

3. In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses;ACS Applied Electronic Materials;2022-12-30

4. Nonvolatile High-Speed Switching Zn-O-N Thin-Film Transistors with a Bilayer Structure;ACS Applied Materials & Interfaces;2022-03-08

5. Analysis of Electrical Transport Properties of Amorphous Oxide Semiconductors by an Extended Percolation-Based Random Band-Edge Model;Physical Review Applied;2022-02-02

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